2
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=68Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 330
μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS
=28Vdc,ID
= 1050 mAdc)
VGS(Q)
?
2.8
?
Vdc
Fixture Gate Quiescent Voltage
(1)
(VDD
=28Vdc,ID
= 1050 mAdc, Measured in Functional Test)
VGG(Q)
2.2
3.1
4.4
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=3.3Adc)
VDS(on)
?
0.24
?
Vdc
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(VDS
=28Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
1.5
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1050 mA, Pout
=23WAvg.,f1=2112.5MHz,f2=
2157.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @
±5MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @
±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
14.5
16
dB
Drain Efficiency
ηD
24
25.5
36
%
Intermodulation Distortion
IM3
-- 4 7
-- 3 7
-- 3 5
dBc
Adjacent Channel Power Ratio
ACPR
-- 5 0
-- 4 0
-- 3 8
dBc
Input Return Loss
IRL
?
-- 1 2
-- 1 0
dB
1. VGG
= 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part is internally matched both on input and output.
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Y
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